Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy
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Abstract
We report on spatially resolved optical measurements of high-quality InGaN/GaN multiple quantum wells under conditions of direct high optical injection (>1019 cm-3) using near-field optical microscopy in the collection mode. The spectral dependence of the spatial distribution of the photoluminescence indicates that the range of In-composition fluctuations reaches the 100-nm lateral scale. The spectra are dependent on the carrier injection level and reveal significant state filling effect. We sketch tentative conclusions about the In-cluster size distribution in terms of contributions to the radiative processes that involve localized and extended states, respectively, in the regime of electron-hole (e-h) pair densities at which present diode lasers operate. © 1998 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy</title><author><name sortKey="Vertikov, A" uniqKey="Vertikov A">A. Vertikov</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering and Department of Physics, Brown University, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Nurmikko, A V" uniqKey="Nurmikko A">A. V. Nurmikko</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Division of Engineering and Department of Physics, Brown University, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Doverspike, K" uniqKey="Doverspike K">K. Doverspike</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Cree Research Inc., Durham, North Carolina 27713</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>Cree Research Inc., Durham</wicri:cityArea></affiliation></author><author><name sortKey="Bulman, G" uniqKey="Bulman G">G. Bulman</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Cree Research Inc., Durham, North Carolina 27713</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>Cree Research Inc., Durham</wicri:cityArea></affiliation></author><author><name sortKey="Edmond, J" uniqKey="Edmond J">J. Edmond</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Cree Research Inc., Durham, North Carolina 27713</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>Cree Research Inc., Durham</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">98-0328792</idno><date when="1998-07-27">1998-07-27</date><idno type="stanalyst">PASCAL 98-0328792 AIP</idno><idno type="RBID">Pascal:98-0328792</idno><idno type="wicri:Area/Main/Corpus">016C40</idno><idno type="wicri:Area/Main/Repository">015D24</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron-hole recombination</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Localized states</term><term>Optical microscopy</term><term>Photoluminescence</term><term>Semiconductor quantum wells</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7320D</term><term>7361E</term><term>7340K</term><term>7866F</term><term>7855C</term><term>7320F</term><term>7350G</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Puits quantique semiconducteur</term><term>Microscopie optique</term><term>Photoluminescence</term><term>Etat interface</term><term>Etat localisé</term><term>Recombinaison électron trou</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on spatially resolved optical measurements of high-quality InGaN/GaN multiple quantum wells under conditions of direct high optical injection (>10<sup>19</sup> cm<sup>-3</sup>) using near-field optical microscopy in the collection mode. The spectral dependence of the spatial distribution of the photoluminescence indicates that the range of In-composition fluctuations reaches the 100-nm lateral scale. The spectra are dependent on the carrier injection level and reveal significant state filling effect. We sketch tentative conclusions about the In-cluster size distribution in terms of contributions to the radiative processes that involve localized and extended states, respectively, in the regime of electron-hole (e-h) pair densities at which present diode lasers operate. © 1998 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>73</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy</s1></fA08><fA11 i1="01" i2="1"><s1>VERTIKOV (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>NURMIKKO (A. 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